Datasheet Details
| Part number | BDY13-6 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.54 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BDY13-6-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor BDY13-6.
| Part number | BDY13-6 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.54 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BDY13-6-InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1V(Max)@ IC = 3A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for LF signal powe amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current 0.3 A PC Collector Power Dissipation@TC=45℃ 26 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature -65~125 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BDY13-6 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
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