BDY13-6 Datasheet (Inchange Semiconductor)

Part BDY13-6
Description Silicon NPN Power Transistor
Category Transistor
Manufacturer Inchange Semiconductor
Size 207.54 KB
Inchange Semiconductor

BDY13-6 Overview

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) - Collector-Emitter Saturation Voltage- : VCE(sat)= 1V(Max)@ IC = 3A - High Switching Speed - Minimum Lot-to-Lot variations for robust device performance and reliable operation.