BDY13-6
BDY13-6 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
isc Silicon NPN Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.)
- Collector-Emitter Saturation Voltage-
: VCE(sat)= 1V(Max)@ IC = 3A
- High Switching Speed
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for LF signal powe amplifier...
