Datasheet Details
| Part number | BDY82 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 220.21 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | BDY82-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | BDY82 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 220.21 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | BDY82-InchangeSemiconductor.pdf |
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·Continuous Collector Current-IC= -4A ·Collector Power Dissipation- : PC= 36W @TC= 25℃ ·plement to Type BDY80 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose switching and amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -35 V VEBO Emitter-Base Voltage -10 V IC Collector Current-Continuous -4 A IB Base Current-Continuous -2 A PC Collector Power Dissipation@TC=25℃ 36 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 3.5 ℃/W BDY82 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BDY82 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA;
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