Datasheet Details
| Part number | BU100 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.39 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | BU100_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BU100 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.39 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | BU100_InchangeSemiconductor.pdf |
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 3.3V(Max.)@ IC= 8A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output stage of CTV receivers and high voltage,fast switching and industrial applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak Repetitive 15 A PC Collector Power Dissipation @ TC=75℃ 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ BU100 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BU1006 | Enhanced PowerBridge Rectifiers | Vishay Siliconix |
 |
BU1006-E3 | Bridge Rectifiers | Vishay |
|
BU1006-M3 | Bridge Rectifiers | Vishay |
|
BU1006A | Enhanced PowerBridge Rectifiers | Vishay Siliconix |
|
BU1006A-E3 | Bridge Rectifiers | Vishay |
| Part Number | Description |
|---|---|
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