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BU120 - Silicon NPN Power Transistor

General Description

Collector-Emitter Sustaining Voltage- :VCEO(SUS) = 200V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

receivers and high voltalge, fast switching and industrial application.

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isc Silicon NPN Power Transistors BU120 DESCRIPTION ·Collector-Emitter Sustaining Voltage- :VCEO(SUS) = 200V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output stage of CTV receivers and high voltalge, fast switching and industrial application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitter Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3.