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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU2727DX
www.datasheet4u.com
DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Ddamper Ddiode APPLICATIONS ·Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCES
Collector- Emitter Voltage(VBE= 0)
1700
V
VCEO
Collector-Emitter Voltage
825
V
VEBO
Emitter-Base Voltage
7.