Datasheet Details
| Part number | BU2727DX |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 145.96 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet | BU2727DX_InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2727DX www.datasheet4u.
| Part number | BU2727DX |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 145.96 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet | BU2727DX_InchangeSemiconductor.pdf |
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·High Switching Speed ·High Voltage ·Built-in Ddamper Ddiode APPLICATIONS ·Designed for use in horizontal deflection circuits of high resolution monitors.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1700 V VCEO Collector-Emitter Voltage 825 V VEBO Emitter-Base Voltage 7.5 V IC ICM Collector Current- Continuous 12 A Collector Current-Peak 30 A IB B Base Current- Continuous 12 A IBM Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 20 A PC 45 W ℃ ℃ TJ 150 Tstg Storage Temperature Range -65~150 SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 2.8 UNIT ℃/W Rth j-c isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS www.datasheet4u.com BU2727DX TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BU2727DF | SILICON POWER TRANSISTOR | SavantIC |
 |
BU2727A | Silicon Diffused Power Transistor | NXP |
 |
BU2727A | NPN Transistor | INCHANGE |
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BU2727AF | Silicon Diffused Power Transistor | NXP |
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BU2727AF | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| BU2527AW | Silicon NPN Power Transistor |
| BU2527AX | Silicon NPN Power Transistor |
| BU2532AW | Silicon NPN Power Transistor |