BU522 - Silicon Darlington NPN Power Transistor

Inchange Semiconductor

General Description

High Voltage Low Collector Saturation Voltage- : VCE(sat)= 2.5V @ IC= 4A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in ignition circuit.

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Datasheet Details

Part number	BU522
Manufacturer	Inchange Semiconductor
File Size	211.35 KB
Description	Silicon Darlington NPN Power Transistor
Datasheet	BU522 Datasheet

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isc Silicon Darlington NPN Power Transistor BU522 DESCRIPTION ·High Voltage ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V @ IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in ignition circuit. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER(SUS) Collector-Emitter Voltage 350 V VCER Collector-Emitter Voltage 375 V VCBO Collector-Base Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current 7 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 75 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.