BU705DF Datasheet PDF - Inchange Semiconductor Silicon NPN Power Transistor Specs

BU705DF - Silicon NPN Power Transistor

Datasheet Summary

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) High Switching Speed Built-in Integrated Efficiency Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of TV r

Datasheet Details

Part number	BU705DF
Manufacturer	Inchange Semiconductor
File Size	214.96 KB
Description	Silicon NPN Power Transistor
Datasheet	BU705DF Datasheet
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isc Silicon NPN Power Transistor BU705DF DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Built-in Integrated Efficiency Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1350 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 2.

Published: Jan 9, 2012 |