BU810
BU810 is Silicon NPN Darlington Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min)
- High Switching Speed
APPLICATIONS
- Designed for use in high frequency and efficency converters, switching regulators and motor control.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range
VALUE 600 400 5 7 10 2 75 150 -65~150
UNIT V V V A A A W ℃ ℃
PC TJ Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.66 UNIT ℃/W isc Website：.iscsemi.cn
INCHANGE Semiconductor
.. isc Product Specification isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100m A ;IB= 0
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 2A; IB= 20m A
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 4A; IB= 0.2A
VCE(sat)-3
Collector-Emitter Saturation Voltage
IC= 7A; IB=...
