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BU810 - Silicon NPN Darlington Power Transistor

General Description

Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min) High Switching Speed APPLICATIONS

Designed for use in high frequency and efficency converters, switching regulators and motor control.

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INCHANGE Semiconductor www.DataSheet4U.com isc Product Specification isc Silicon NPN Darlington Power Transistor BU810 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in high frequency and efficency converters, switching regulators and motor control. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 600 400 5 7 10 2 75 150 -65~150 UNIT V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.