Datasheet Details
| Part number | BU920P |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.40 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BU920P-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor BU920P.
| Part number | BU920P |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.40 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BU920P-InchangeSemiconductor.pdf |
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·High Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for automotive ignition applications and inverter circuits for motor control.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 400 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 5 V IC Collector Current 10 A ICM Collector Current-peak 15 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 105 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.2 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BU920P ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BU920P | HIGH VOLTAGE POWER DISSIPATION | ST Microelectronics |
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BU920PFI | HIGH VOLTAGE POWER DISSIPATION | ST Microelectronics |
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BU920PFI | NPN Transistor | INCHANGE |
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BU920 | HIGH VOLTAGE POWER DISSIPATION | ST Microelectronics |
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BU920 | NPN Transistor | INCHANGE |
| Part Number | Description |
|---|---|
| BU910 | Silicon NPN Darlington Power Transistor |
| BU912 | Silicon NPN Darlington Power Transistor |
| BU999 | Silicon NPN Power Transistor |