Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 140V(Min)
High Switching Speed
High Power Dissipation
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
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isc Silicon NPN Power Transistor
BU999
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 140V(Min) ·High Switching Speed ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching and linear applications.
BU999 Datasheet
