Datasheet Details
| Part number | BUK444-800B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 61.31 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | BUK444-800B-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.
| Part number | BUK444-800B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 61.31 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | BUK444-800B-InchangeSemiconductor.pdf |
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|
·1.2A, 800V • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • Majority Carrier Device • Related Literature APPLICATIONS ·use in Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage Drain Current-continuous@ TC=37℃ Total Dissipation@TC=25℃ Max.
Operating Junction Temperature Storage Temperature Range 800 ±30 1.2 30 150 150 V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 4.17 ℃/W 55 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification BUK444-800B ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BUK444-800B | PowerMOS transistor | NXP |
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BUK444-800B | N-Channel MOSFET | INCHANGE |
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BUK444-800A | PowerMOS transistor | NXP |
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BUK444-800A | N-Channel MOSFET | INCHANGE |
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| BUK446-800A | N-Channel MOSFET Transistor |
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