BUK444-800B Datasheet | Inchange Semiconductor

DESCRIPTION - 1.2A, 800V - SOA is Power Dissipation Limited - Nanosecond Switching Speeds - Linear Transfer Characteristics - Majority Carrier Device - Related Literature APPLICATIONS - use in Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage Drain Current-continuous@ TC=37℃ Total Dissipation@TC=25℃ Max. Operating Junction Temperature Storage Temperature Range 800 ±30 1.2 30 150 150 V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 4.17 ℃/W 55 ℃/W isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdf Factory Pro .fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification - ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25m A VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 1m A RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 1A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 800V; VGS= 0 VSD Diode Forward Voltage IF= 1.4A; VGS= 0 MIN MAX...