Datasheet Details
| Part number | BUK445-200A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 229.80 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | BUK445-200A-InchangeSemiconductor.pdf |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | BUK445-200A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 229.80 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | BUK445-200A-InchangeSemiconductor.pdf |
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·Drain Source Voltage- : VDSS=200V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage Drain BUK445-200A ID Current-continuous @ TC=25℃ BUK445-200B Ptot Total Dissipation@TC=25℃ Tj Max.
Operating Junction Temperature Tstg Storage Temperature Range VALUE UNIT 200 V ±30 V 7.6 A 7 30 W 150 ℃ 150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.17 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 55 ℃/W BUK445-200A/B isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor BUK445-200A/B ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
ID= 0.25mA 200 V VGS(th) Gate Threshold Voltage VDS=VGS;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BUK445-200A | PowerMOS transistor | NXP |
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BUK445-200B | PowerMOS transistor | NXP |
| Part Number | Description |
|---|---|
| BUK445-200B | N-Channel MOSFET Transistor |
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| BUK446-800A | N-Channel MOSFET Transistor |
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| BUK452-100A | N-Channel MOSFET Transistor |
| BUK452-100B | N-Channel MOSFET Transistor |
| BUK452-60A | N-Channel MOSFET Transistor |
| BUK452-60B | N-Channel MOSFET Transistor |