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BUK445-200B - N-Channel MOSFET Transistor

Download the BUK445-200B datasheet PDF. This datasheet also covers the BUK445-200A variant, as both devices belong to the same n-channel mosfet transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

Drain Source Voltage- : VDSS=200V(Min) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance applic

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Note: The manufacturer provides a single datasheet file (BUK445-200A-InchangeSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Inchange Semiconductor

Part Number Description
BUK445-200A N-Channel MOSFET Transistor
BUK445-60A N-Channel MOSFET Transistor
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BUK444-800B N-Channel MOSFET Transistor
BUK446-800A N-Channel MOSFET Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=200V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage Drain BUK445-200A ID Current-continuous @ TC=25℃ BUK445-200B Ptot Total Dissipation@TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature Range VALUE UNIT 200 V ±30 V 7.6 A 7 30 W 150 ℃ 150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.