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BUK452-100B - N-Channel MOSFET Transistor

This page provides the datasheet information for the BUK452-100B, a member of the BUK452-100A N-Channel MOSFET Transistor family.

Datasheet Summary

Description

Drain Source Voltage- : VDSS=100V(Min) Low RDS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching

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Datasheet Details

Part number BUK452-100B
Manufacturer Inchange Semiconductor
File Size 228.58 KB
Description N-Channel MOSFET Transistor
Datasheet download datasheet BUK452-100B Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage Drain BUK452-100A ID Current-continuou s@ TC=25℃ BUK452-100B Ptot Total Dissipation@TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature Range VALUE UNIT 100 V ±30 V 11 A 10 60 W 175 ℃ 175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.
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