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BUK453-100B - N-Channel MOSFET Transistor

This page provides the datasheet information for the BUK453-100B, a member of the BUK453-100A N-Channel MOSFET Transistor family.

Datasheet Summary

Description

Drain Source Voltage- : VDSS=100V(Min) Low RDS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching

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Datasheet Details

Part number BUK453-100B
Manufacturer Inchange Semiconductor
File Size 228.83 KB
Description N-Channel MOSFET Transistor
Datasheet download datasheet BUK453-100B Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage Drain BUK453-100A ID Current-continuou s@ TC=25℃ BUK453-100B Ptot Total Dissipation@TC=25℃ ±30 V 14 A 13 75 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER 175 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.
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