Datasheet4U Logo Datasheet4U.com

BUK455-200A Datasheet N-channel MOSFET Transistor

Manufacturer: Inchange Semiconductor

Overview: isc N-Channel MOSFET Transistor.

General Description

·Drain Source Voltage- : VDSS=200V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage Drain BUK455-200A ID Current-continuou s@ TC=25℃ BUK455-200B Ptot Total Dissipation@TC=25℃ Tj Max.

Operating Junction Temperature Tstg Storage Temperature Range VALUE UNIT 200 V ±30 V 14 A 13 125 W 175 ℃ 175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.2 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 60 ℃/W BUK455-200A/B isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor BUK455-200A/B ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0;

BUK455-200A Distributor