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BUK456-800B - N-Channel MOSFET Transistor

This page provides the datasheet information for the BUK456-800B, a member of the BUK456-800A N-Channel MOSFET Transistor family.

Description

Drain Source Voltage- : VDSS=800V(Min) Low RDS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching

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Datasheet Details

Part number BUK456-800B
Manufacturer Inchange Semiconductor
File Size 229.11 KB
Description N-Channel MOSFET Transistor
Datasheet download datasheet BUK456-800B Datasheet
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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=800V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage Drain BUK456-800A ID Current-continuou s@ TC=25℃ BUK456-800B Ptot Total Dissipation@TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature Range VALUE UNIT 800 V ±30 V 4 A 3.5 125 W 150 ℃ 150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
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