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BUK457-400B Datasheet N-Channel MOSFET Transistor

Manufacturer: Inchange Semiconductor

Overview: isc N-Channel MOSFET Transistor.

Download the BUK457-400B datasheet PDF. This datasheet also includes the BUK457-400A variant, as both parts are published together in a single manufacturer document.

General Description

·Drain Source Voltage- : VDSS=400V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage Drain BUK457-400A ID Current-continuou s@ TC=25℃ BUK457-400B Ptot Total Dissipation@TC=25℃ Tj Max.

Operating Junction Temperature Tstg Storage Temperature Range VALUE UNIT 400 V ±30 V 13 A 11 150 W 150 ℃ 150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.83 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 60 ℃/W BUK457-400A/B isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor BUK457-400A/B ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0;

ID= 0.25mA 400 V VGS(th) Gate Threshold Voltage VDS=VGS;