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BUL38D - Silicon NPN Power Transistors

General Description

Collector Emitter Sustaining Voltage : VCEO(SUS) = 450V(Min.) Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1.0A Very High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BUL38D DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 450V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1.