BUL39D
BUL39D is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector- Emitter Sustaining Voltage
: VCEO(SUS) = 450V(Min.)
- Collector Saturation Voltage
: VCE(sat) = 0.5V(Max) @ IC= 1.0A
- Very High Switching Speed
APPLICATIONS
- Designed for use in lighting applications and low cost switch- mode power supplies
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES Collector-Emitter Voltage
850 V
VCEO Collector-Emitter Voltage
450 V
VEBO Emitter-Base Voltage
9V
IC Collector Current-Continuous
4A
ICM Collector Current-peak tp<5ms IB Base Current-Continuous
8A 2A
IBM Base Current-peak tp<5ms
Collector Power Dissipation TC=25℃
Ti Junction Temperature
Tstg Storage Temperature Range
4 70 150 -65~150
A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-A
Thermal Resistance,Junction to Case
1.78 ℃/W
Thermal Resistance,Junction to Ambient 70 ℃/W isc website：.iscsemi.cn
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product...
