Download BUL810 Datasheet PDF
Inchange Semiconductor
BUL810
BUL810 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION - High Voltage Capability - High Switching Speed APPLICATIONS Designed for use in lighting applications and low cost swith-mode power supplies. - Electronic transformer for halogen lamps - Electronic ballasts for fluorescent lighting - Switch mode power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 15 A ICM Collector Current-peak ( tp <5 ms ) 22 IBB Base Current-Continuous 5A IBM Base Current-peak ( tp <5 ms ) Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 10 A 125 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction-Case Thermal Resistance,Junction-Ambient 30 ℃/W ℃/W isc...