Datasheet Details
| Part number | BUL810 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 76.21 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BUL810-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part number | BUL810 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 76.21 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BUL810-InchangeSemiconductor.pdf |
|
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·High Voltage Capability ·High Switching Speed APPLICATIONS Designed for use in lighting applications and low cost swith-mode power supplies.
·Electronic transformer for halogen lamps ·Electronic ballasts for fluorescent lighting ·Switch mode power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 15 A ICM Collector Current-peak ( tp <5 ms ) 22 A IBB Base Current-Continuous 5A IBM Base Current-peak ( tp <5 ms ) PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 10 A 125 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction-Case 1.0 Thermal Resistance,Junction-Ambient 30 ℃/W ℃/W isc Web
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BUL810 | NPN Transistor | STMicroelectronics |
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