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BUP22A Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching- regulators, motor control systems etc.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES VCEO VEBO IC ICM IBB IBM PC TJ Tstg Collector- Emitter Voltage VBE=0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range 650 V 350 V 9V 8A 20 A 4A 6A 125 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.0 ℃/W isc Website:.iscsemi.cn INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUP22A ELECTRICAL CHARACTERISTICS TC=25℃ unless

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