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BUS22 Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistors isc Product Specification BUS22.

General Description

High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V (Min) APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCES Collector- EmitterVoltage(VBE= 0) 550 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 8A ICM Collector Current-Peak 20 A IB Base Current-Continuous 4A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 6 125 200 -65~200 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.4 ℃/W · isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors isc Product Specification BUS22 ELECTRICAL CHARACTERISTICS

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