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BUS23 Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistors BUS23/A.

General Description

· High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V (Min)-BUS23 350V (Min)-BUS23A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCES Collector- Emitter Voltage(VBE= 0) BUS23 550 V BUS23A 650 VCEO Collector-Emitter Voltage BUS23 300 V BUS23A 350 VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 6 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 9 A 175 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.7 ℃/W isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BUS23 BUS23A IC= 50mA ;

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