BUS23B
BUS23B is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High Switching Speed
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min)-BUS23B 450V (Min)-BUS23C
APPLICATIONS
- Designed for use in converters, inverters, switching regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
UNIT
VCES
Collector- Emitter Voltage(VBE= 0)
BUS23B BUS23C
750 850
VCEO
Collector-Emitter Voltage
BUS23B BUS23C
400 450
VEBO IC ICM IBB IBM PC Tj Tstg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature
Storage Temperature Range
9 15 30 6 9 175 150 -65~150
V A A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.7 ℃/W isc Website：.iscsemi.cn
INCHANGE Semiconductor isc Silicon NPN Power...
