BUTW92 Description
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUTW92 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 5mA; VEB =0 500 V VEBO Emitter-Base Breakdown Voltage IE= 1mA 7 VCE(sat) Collector-Emitter Saturation Voltage IC= 60A; IB= 15A 1.0 V VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO...