Datasheet4U Logo Datasheet4U.com

BUV37 - Silicon NPN Power Transistor

General Description

Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min.) Low Collector Saturation Voltage: VCE(sat)= 2.0V(Max.)@ IC= 10A APPLICATIONS

Designed for use in automotive ignition circuits.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUV37 POWER TRANSISTORS Mospec Semiconductor
BUV39 Bipolar NPN Device Seme LAB
BUV10N Bipolar NPN Device in a Hermetically sealed TO3 Metal Package Seme LAB
BUV11 20 AMPERES NPN SILICON POWER METAL TRANSISTOR Motorola Inc
BUV11 SITCHMODE Series NPN Silicon Power Transistor ON Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
BUV39 Silicon NPN Power Transistor
BUV10 Silicon NPN Power Transistor
BUV18 Silicon NPN Power Transistor
BUV19 Silicon NPN Power Transistor
BUV20 Silicon NPN Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV37 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min.) ·Low Collector Saturation Voltage: VCE(sat)= 2.0V(Max.)@ IC= 10A APPLICATIONS ·Designed for use in automotive ignition circuits. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current-Peak Base Current - Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 600 400 8 15 30 4 100 150 -65~150 UNIT V V V A A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.