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BUV39 - Silicon NPN Power Transistor

General Description

Low Collector Saturation Voltage: VCE(sat)= 0.8V (Max.) @IC= 7.5A High Switching Speed APPLICATIONS

Designed for high current, high speed, high power applications.

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www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV39 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 0.8V (Max.) @IC= 7.5A ·High Switching Speed APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL VCEV VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage VBE=-1.