BUV51 - Silicon NPN Power Transistor

Inchange Semiconductor

General Description

High Current Capability Low Collector Saturation Voltage- : VCE(sat)= 0.8V (Max.) @IC= 5A High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

📥 Download Datasheet

BUV51 silicon npn power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	BUV51
Manufacturer	Inchange Semiconductor
File Size	205.30 KB
Description	Silicon NPN Power Transistor
Datasheet	BUV51 Datasheet

Full PDF Text Transcription for BUV51 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BUV51. For precise diagrams, and layout, please refer to the original PDF.

isc Silicon NPN Power Transistor BUV51 DESCRIPTION ·High Current Capability ·Low Collector Saturation Voltage- : VCE(sat)= 0.8V (Max.) @IC= 5A ·High Switching Speed ·Mini...

View more extracted text

n Voltage- : VCE(sat)= 0.8V (Max.) @IC= 5A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCEV Collector-Emitter Voltage (VBE= -1.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	BUV51	Bipolar NPN Device	Seme LAB

More Datasheets from Inchange Semiconductor

Part Number	Description
BUV52	Silicon NPN Power Transistor
BUV52A	Silicon NPN Power Transistor
BUV56	Silicon NPN Power Transistor
BUV10	Silicon NPN Power Transistor
BUV18	Silicon NPN Power Transistor
BUV19	Silicon NPN Power Transistor
BUV20	Silicon NPN Power Transistor
BUV22	Silicon NPN Power Transistor
BUV24	Silicon NPN Power Transistor
BUV26AF	Silicon NPN Power Transistors