BUV52 - Silicon NPN Power Transistor

Inchange Semiconductor

General Description

High Current Capability Low Collector Saturation Voltage- : VCE(sat)= 0.8V (Max.) @IC= 4A High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

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BUV52 silicon npn power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	BUV52
Manufacturer	Inchange Semiconductor
File Size	205.22 KB
Description	Silicon NPN Power Transistor
Datasheet	BUV52 Datasheet

Full PDF Text Transcription for BUV52 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BUV52. For precise diagrams, and layout, please refer to the original PDF.

isc Silicon NPN Power Transistor BUV52 DESCRIPTION ·High Current Capability ·Low Collector Saturation Voltage- : VCE(sat)= 0.8V (Max.) @IC= 4A ·High Switching Speed ·Mini...

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n Voltage- : VCE(sat)= 0.8V (Max.) @IC= 4A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCEV Collector-Emitter Voltage (VBE= -1.

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