Datasheet Details
| Part number | BUW45 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.43 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BUW45-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BUW45 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.43 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BUW45-InchangeSemiconductor.pdf |
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Intended in fast switching applications for high output powers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous PT Total Power Dissipation @ TC≤25℃ TJ Junction Temperature 10 A 175 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.0 ℃/W BUW45 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BUW45 | Bipolar NPN Device | Seme LAB |
| Part Number | Description |
|---|---|
| BUW40 | Silicon NPN Power Transistor |
| BUW40A | Silicon NPN Power Transistor |
| BUW40B | Silicon NPN Power Transistor |
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| BUW11AW | Silicon NPN Power Transistor |
| BUW12AF | Silicon NPN Power Transistor |
| BUW12AW | Silicon NPN Power Transistor |
| BUW12F | Silicon NPN Power Transistor |
| BUW12W | Silicon NPN Power Transistor |