High Current Capability
Fast Switching Speed
Low Saturation Voltage and High Gain
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
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BUW51. For precise diagrams, and layout, please refer to the original PDF.
isc Silicon NPN Power Transistor BUW51 DESCRIPTION ·High Current Capability ·Fast Switching Speed ·Low Saturation Voltage and High Gain ·Minimum Lot-to-Lot variations for...
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ow Saturation Voltage and High Gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCEV Collector-Emitter Voltage (VBE= -1.