BUW57
BUW57 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 125V(Min.)
- Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max.) @IC= 18A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for high current, high speed, high power applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCES
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-peak
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.25...
