Datasheet4U Logo Datasheet4U.com

BUW57 - Silicon NPN Power Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 125V(Min.) Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.) @IC= 18A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current, high speed, high power appli

📥 Download Datasheet

Full PDF Text Transcription for BUW57 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BUW57. For precise diagrams, and layout, please refer to the original PDF.

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 125V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.) @IC=...

View more extracted text
V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.) @IC= 18A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Seme LAB Logo BUW57 Bipolar NPN Device Seme LAB

More Datasheets from Inchange Semiconductor

Part Number Description
BUW51 Silicon NPN Power Transistor
BUW52 Silicon NPN Power Transistor
BUW58 Silicon NPN Power Transistor
BUW11AW Silicon NPN Power Transistor
BUW12AF Silicon NPN Power Transistor
BUW12AW Silicon NPN Power Transistor
BUW12F Silicon NPN Power Transistor
BUW12W Silicon NPN Power Transistor
BUW38 Silicon NPN Power Transistor
BUW39 Silicon NPN Power Transistor