Datasheet Details
| Part number | BUW75 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.30 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BUW75-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BUW75 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.30 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BUW75-InchangeSemiconductor.pdf |
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Intended in fast switching applications for high output powers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 600 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 17 A IB Base Current-Continuous 5 A IBM Base Current-Peak PT Total Power Dissipation @ TC≤25℃ TJ Junction Temperature 7 A 120 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.25 ℃/W BUW75 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BUW75 | Bipolar NPN Device | Seme LAB |
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