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BUX18 - Silicon NPN Power Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min)- BUX18 = 325V(Min)- BUX18A = 375V(Min)- BUX18B = 425V(Min)- BUX18C High Switching Speed High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desig

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isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min)- BUX18 = 325V(Min)- BUX18A = 375V(Min)- BUX18B = 425V(Min)- B...

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00V(Min)- BUX18 = 325V(Min)- BUX18A = 375V(Min)- BUX18B = 425V(Min)- BUX18C ·High Switching Speed ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in off-line power supplies and is also well suited for use in a wide range of inverter or converter circuits and pulse-width-modulated regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BUX18 250 VCEV Collector-Emitter Voltage VBE= -1.

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