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BUX45 Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor.

General Description

·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.) @ IC= 1A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed, high voltage, high power applications.

Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCEX VCER VCEO Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 500 V 500 V 500 V 500 V 7 V 5 A 7 A 1 A 120 W 200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.46 ℃/W BUX45 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;

IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA;

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