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BUX98P - Silicon NPN Power Transistor

General Description

High Voltage Capability High Current Capability Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching mode power supplies Motor control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE

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isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage Capability ·High Current Capability ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching mode power supplies ·Motor control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 30 A ICM Collector Current-peak 60 A IB Base Current-Continuous 6 A IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 10 A 200 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX Rth j-c Thermal Resistance, Junction to