BUZ211
BUZ211 is N-Channel MOSFET Transistor manufactured by Inchange Semiconductor.
FEATURES
- Static Drain-Source On-Resistance
: RDS(on) = 0.8Ω(Max)
- SOA is Power Dissipation Limited
- High input impedance
- High speed switching
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power .
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
±20
Drain Current-continuous@ TC=25℃
Drain Current-Single Plused
Ptot
Total Dissipation@TC=25℃
Tj
Max. Operating Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to...
