BYT79B-600P - Ultrafast Recovery Rectifier

Inchange Semiconductor

Key Features

Ultrafast Recovery Time.
Low Forward Voltage.
Low Leakage Current.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

BYT79B-600P ultrafast recovery rectifier by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	BYT79B-600P
Manufacturer	Inchange Semiconductor
File Size	244.89 KB
Description	Ultrafast Recovery Rectifier
Datasheet	BYT79B-600P Datasheet

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Ultrafast Recovery Rectifier BYT79B-600P FEATURES ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching power supplies，Power switching circuits，General purpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage IF(AV) Average Rectified Forward Current (Rated VR) IFRM Peak Repetitive Forward Current 600 V 15 A 30 A IFSM Nonrepetitive Peak Surge Current 150 A TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.2 ℃/W isc website：www.iscsemi.