C2665 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for audio frequency power amplifier applications. RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;.
C2665 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for audio frequency power amplifier applications. RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;.