Datasheet Details
| Part number | C2665 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 71.35 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | C2665-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part number | C2665 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 71.35 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | C2665-InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 55 W 150 ℃ Tstg Storage Temperature Range -40~150 ℃ isc Website：.iscsemi.cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC2665 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
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