C2665 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for audio frequency power amplifier applications. RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;.
C2665 datasheet by Inchange Semiconductor.
| Part number | C2665 |
|---|---|
| Datasheet | C2665-InchangeSemiconductor.pdf |
| File Size | 71.35 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for audio frequency power amplifier applications. RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;.
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| Part Number | Description |
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