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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3371
DESCRIPTION ·Collector-Emiiter Sustaining Voltage: VCEO(SUS)= 500V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 8A ·High Speed Switching
·
APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
w w w
s c s .i
VALUE 800 V 500 V 7 V 15 A 30 A 5 A
UNIT
n c . i m e
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
B
Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature
PC
200
W
Tj
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.