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INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SC3480
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode
APPLICATIONS
·Designed for high definition CRT display horizontal
deflection output applications.
i.cnABSOLUTE MAXIMUM RATINGS(Ta=25℃)
.iscsemSYMBOL
PARAMETER
VALUE
UNIT
wwwVCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current- Continuous
3.5
A
Collector Power Dissipation PC @ TC=25℃
80 W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
www.DataSheet4U.