C5450 - Silicon NPN Power Transistor

Inchange Semiconductor

General Description

High Breakdown Voltage- : VCBO= 1600V (Min) High Speed Switching High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE

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Datasheet Details

Part number	C5450
Manufacturer	Inchange Semiconductor
File Size	240.23 KB
Description	Silicon NPN Power Transistor
Datasheet	C5450 Datasheet

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5450 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1600V (Min) ·High Speed Switching ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1600 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6V IC Collector Current- Continuous 10 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 25 A 70 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.