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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC5803
DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·Wide Area of Safe Operation
APPLICATIONS ·Designed for high voltage color display horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
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w w
s c s i . w
VALUE UNIT 1500 V 800 V 6 V 12 A 24 A 70 W
n c . i m e
IC
Collector Current- Continuous
ICM
Collector Current- Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.
C5803 Datasheet
