CEP18N5 - N-Channel MOSFET Transistor

Description

and solenoid drive.

Features

Drain Current : ID= 18A@ TC=25℃.
Drain Source Voltage : VDSS= 500V(Min).
Static Drain-Source On-Resistance : RDS(on) = 0.29Ω(Max) @ VGS= 10V.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

Inchange Semiconductor

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Datasheet Details

Part number	CEP18N5
Manufacturer	Inchange Semiconductor
File Size	288.78 KB
Description	N-Channel MOSFET Transistor
Datasheet	CEP18N5 Datasheet
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isc N-Channel MOSFET Transistor CEP18N5 FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.29Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 18 A IDM Drain Current-Single Pluse 72 A PD Total Dissipation @TC=25℃ 219 W TJ Max.

Published: Jul 10, 2022 |