Datasheet Details
| Part number | D103 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.51 KB |
| Description | 2SD103 |
| Datasheet | D103_InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors.
| Part number | D103 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.51 KB |
| Description | 2SD103 |
| Datasheet | D103_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) ·High Power Dissipation: PC= 25W(Max)@TC=25℃ plement to Type 2SB503 APPLICATIONS ·Designed for audio power amplifier, power switching, DC-DC converter and regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IE IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Emitter Current-Continuous Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature VALUE 80 .DataSheet.net/ UNIT V V V A A A W ℃ ℃ 50 10 3 -3 1 25 150 -65~150 PC TJ Tstg isc Website：.iscsemi.cn Datasheet pdf - http://..co.kr/ INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) VBE(on) ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product Output Capacitance CONDITIONS IC= 100mA;
IB= 0 IC= 10mA;
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D1031SH | Fast Hard Drive Diode | Infineon |
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D1031UK | METAL GATE RF SILICON FET | Seme LAB |
| Part Number | Description |
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