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D103 - 2SD103

General Description

Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) High Power Dissipation: PC= 25W(Max)@TC=25℃ Complement to Type 2SB503 APPLICATIONS

Designed for audio power amplifier, power switching, DC-DC converter and regulator applications.

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD103 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) ·High Power Dissipation: PC= 25W(Max)@TC=25℃ Complement to Type 2SB503 APPLICATIONS ·Designed for audio power amplifier, power switching, DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IE IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Emitter Current-Continuous Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature VALUE 80 www.DataSheet.net/ UNIT V V V A A A W ℃ ℃ 50 10 3 -3 1 25 150 -65~150 PC TJ Tstg isc Website：www.iscsemi.