D1170
DESCRIPTION
- Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min)
- High DC Current Gain: h FE= 2000( Min.) @(IC= 3A, VCE= 2V)
- Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max)@ (IC= 3A, IB= 3m A)
APPLICATIONS
- Driver for solenoid,motor and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage w w s c s i . w
VALUE 120 V 120 V 6 V 6 A 10 A 1 A
UNIT n c . i m e
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature
℃
Tstg
Storage Temperature
-55~150
℃ isc Website：.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SD1170
TYP.
UNIT
V(BR)CEO
Collector-Emitter Breakdown...
