Datasheet Details
| Part number | D1170 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 235.77 KB |
| Description | 2SD1170 |
| Datasheet | D1170-InchangeSemiconductor.pdf |
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Overview: .. INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor.
| Part number | D1170 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 235.77 KB |
| Description | 2SD1170 |
| Datasheet | D1170-InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·High DC Current Gain: hFE= 2000( Min.) @(IC= 3A, VCE= 2V) ·Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max)@ (IC= 3A, IB= 3mA) B APPLICATIONS ·Driver for solenoid,motor and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w s c s i .
w VALUE 120 V 120 V 6 V 6 A 10 A 1 A UNIT n c .
| Part Number | Description |
|---|---|
| D1187 | 2SD1187 |