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D1517 - Silicon NPN Power Transistor

General Description

Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) Good Linearity of hFE High Speed Switching APPLICATIONS

Designed for power amplifier,power switching applications.

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www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1517 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·High Speed Switching APPLICATIONS ·Designed for power amplifier,power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w s c s i . w VALUE UNIT 130 V 80 V 7 V 2 A 5 A 25 W n c .