D1656
DESCRIPTION
- High Breakdown Voltage-
: VCBO= 1500V (Min)
- High Switching Speed
- High Reliability
APPLICATIONS
- Color TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.cn SYMBOL
PARAMETER
VALUE
UNIT
.iscsem VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current- Continuous
6A
ICP Collector Current-Pulse
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
16 A 60 W 150 ℃
Tstg Storage Temperature Range
-55~150
℃ isc Website：.iscsemi.cn
INCHANGE Semiconductor
.. isc Silicon NPN Power Transistor isc Product Specification
2SD1656
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100m A; RBE=...
