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D1716 - 2SD1716

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) Good Linearity of hFE Wide Area of Safe Operation Complement to Type 2SB1161 APPLICATIONS

Designed for high power amplifier applications.

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1716 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1161 APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 12 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 20 A 120 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.