D1716 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·plement to Type 2SB1161 APPLICATIONS ·Designed for high power amplifier applications.
D1716 datasheet by Inchange Semiconductor.
| Part number | D1716 |
|---|---|
| Datasheet | D1716-InchangeSemiconductor.pdf |
| File Size | 129.54 KB |
| Manufacturer | Inchange Semiconductor |
| Description | 2SD1716 |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·plement to Type 2SB1161 APPLICATIONS ·Designed for high power amplifier applications.
View all Inchange Semiconductor datasheets
| Part Number | Description |
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